IQE006NE2LM5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS :

Details

Channel Type :

N

Number of Elements per Chip :

1

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

Rise Time :

2.6 ns

Supplier Device Package :

PG-TSON-8-4

Drain to Source Voltage (Vdss) :

25 V

Power Dissipation :

89

Series :

OptiMOS?5

Rds On (Max) @ Id, Vgs :

650mOhm @ 20A, 10V

Current - Continuous Drain (Id) @ 25°C :

41A (Ta), 298A (Tc)

Configuration :

Single

Transistor Polarity :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

82.1 nC @ 10 V

Package / Case :

8-PowerTDFN

Brand :

Infineon Technologies

Package Type :

PQFN 3 x 3

FET Type :

N-Channel

Product Category :

MOSFET

Pin Count :

8

Packaging :

Cut Tape

Channel Mode :

Enhancement

MSL :

MSL 1 - Unlimited

Mounting Style :

SMD/SMT

Vgs (Max) :

±16V

Power Dissipation (Max) :

2.1W (Ta), 89W (Tc)

Tradename :

OptiMOS

Continuous Drain Current Id :

298

Base Product Number :

IQE006

Package :

Digi-Reel?

Input Capacitance (Ciss) (Max) @ Vds :

5453 pF @ 12 V

Manufacturer :

Infineon

Transistor Type :

1 N-Channel

Minimum Operating Temperature :

- 55 C

Maximum Operating Temperature :

+ 150 C

Mounting Type :

Surface Mount

Subcategory :

MOSFETs

Number of Channels :

1 Channel

Vgs(th) (Max) @ Id :

2V @ 250μA

Product Type :

MOSFET

Operating Temperature :

-55°C ~ 150°C (TJ)

Qualification :

-

Product Status :

Active