IPZA60R080P7XKSA1
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- Mfr.Part #
- IPZA60R080P7XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-4
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 37A TO247-4
- Stock
- 12,480
- In Stock ：
- 12,480
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 600V
- Published :
- 2018
- Package / Case :
- TO-247-4
- Surface Mount :
- No
- Vgs(th) (Max) @ Id :
- 4V @ 590μA
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 11.8A, 10V
- Factory Lead Time :
- 18 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Avalanche Energy Rating (Eas) :
- 118 mJ
- Pulsed Drain Current-Max (IDM) :
- 110A
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- JESD-30 Code :
- R-PSFM-T4
- Series :
- CoolMOS™ P7
- Drain-source On Resistance-Max :
- 0.08Ohm
- Power Dissipation-Max :
- 129W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 37A Tc
- Terminal Finish :
- Tin (Sn)
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 4
- DS Breakdown Voltage-Min :
- 600V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 51nC @ 10V
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 2180pF @ 400V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Datasheets
- IPZA60R080P7XKSA1
N-Channel Tube 80m Ω @ 11.8A, 10V ±20V 2180pF @ 400V 51nC @ 10V 600V TO-247-4
IPZA60R080P7XKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 118 mJ.A device's maximum input capacitance is 2180pF @ 400V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its maximum pulsed drain current is 110A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 600V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IPZA60R080P7XKSA1 Features
the avalanche energy rating (Eas) is 118 mJ
based on its rated peak drain current 110A.
a 600V drain to source voltage (Vdss)
IPZA60R080P7XKSA1 Applications
There are a lot of Infineon Technologies
IPZA60R080P7XKSA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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