IPT111N20NFDATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

200V

Published :

2008

Max Junction Temperature (Tj) :

175°C

Factory Lead Time :

18 Weeks

Power Dissipation :

375W

Height :

2.4mm

Lead Free :

Contains Lead

Current - Continuous Drain (Id) @ 25°C :

96A Tc

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

87nC @ 10V

Number of Channels :

1

Vgs(th) (Max) @ Id :

4V @ 267μA

Power Dissipation-Max :

375W Tc

Reach Compliance Code :

not_compliant

Manufacturer Package Identifier :

PG-HSOF-8

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Turn-Off Delay Time :

39 ns

Max Dual Supply Voltage :

200V

Series :

OptiMOS™

Halogen Free :

Halogen Free

ECCN Code :

EAR99

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 100V

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

13 ns

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

11.1m Ω @ 96A, 10V

Continuous Drain Current (ID) :

96A

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Package / Case :

8-PowerSFN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)