IPT059N15N3ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

OptiMOS™

Drain-source On Resistance-Max :

0.0059Ohm

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

7200pF @ 75V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

155A Tc

Published :

2012

Pulsed Drain Current-Max (IDM) :

620A

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 270μA

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 10V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

18 Weeks

Operating Temperature :

-55°C~175°C TJ

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

155A

ECCN Code :

EAR99

Package / Case :

8-PowerSFN

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

JESD-30 Code :

R-PSSO-F2

Drain to Source Voltage (Vdss) :

150V

Case Connection :

DRAIN

Surface Mount :

yes

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

5.9m Ω @ 150A, 10V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

375W Tc

Avalanche Energy Rating (Eas) :

520 mJ

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

150V