IPT039N15N5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

OptiMOS?

Mounting Type :

Surface Mount

Number of Channels :

1 Channel

Power Dissipation (Max) :

3.8W (Ta), 319W (Tc)

Package / Case :

8-PowerSFN

Mounting Style :

SMD/SMT

Supplier Device Package :

PG-HSOF-8

MSL :

-

Rds On (Max) @ Id, Vgs :

3.9mOhm @ 50A, 10V

Package :

Digi-Reel?

Gate Charge (Qg) (Max) @ Vgs :

98 nC @ 10 V

Vgs(th) (Max) @ Id :

4.6V @ 257µA

Channel Mode :

Enhancement

Current - Continuous Drain (Id) @ 25°C :

21A (Ta), 190A (Tc)

Continuous Drain Current Id :

190A

Pin Count :

8

Channel Type :

N

Package Type :

HSOF-8

FET Feature :

-

Power Dissipation :

319W

FET Type :

N-Channel

Number of Elements per Chip :

1

Maximum Operating Temperature :

+ 175 C

Drive Voltage (Max Rds On, Min Rds On) :

8V, 10V

Minimum Operating Temperature :

- 55 C

Input Capacitance (Ciss) (Max) @ Vds :

7700 pF @ 75 V

Operating Temperature :

-55°C ~ 175°C (TJ)

Transistor Polarity :

N-Channel

Product Status :

Active

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

150 V

Qualification :

-