IPT029N08N5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

87nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

52A Ta 169A Tc

Power Dissipation-Max :

168W Tc

Case Connection :

DRAIN

Series :

OptiMOS™ 5

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-F2

Terminal Form :

Flat

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Number of Elements :

1

Number of Terminations :

2

Package / Case :

8-PowerSFN

Transistor Element Material :

SILICON

Factory Lead Time :

18 Weeks

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

80V

Drain-source On Resistance-Max :

0.0029Ohm

Pulsed Drain Current-Max (IDM) :

676A

ECCN Code :

EAR99

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

6500pF @ 40V

Vgs(th) (Max) @ Id :

3.8V @ 108μA

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

2.9m Ω @ 150A, 10V

Avalanche Energy Rating (Eas) :

124 mJ

Pbfree Code :

yes

Transistor Application :

SWITCHING

Published :

2012

Drain Current-Max (Abs) (ID) :

52A

Drain to Source Voltage (Vdss) :

80V