IPT020N10N3ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

34 ns

Package / Case :

8-PowerSFN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Junction Temperature (Tj) :

175°C

ECCN Code :

EAR99

Terminal Form :

Flat

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

11200pF @ 50V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Single

Vgs(th) (Max) @ Id :

3.5V @ 272μA

Series :

OptiMOS™

Gate Charge (Qg) (Max) @ Vgs :

156nC @ 10V

Number of Terminations :

8

Turn-Off Delay Time :

84 ns

Mounting Type :

Surface Mount

Power Dissipation-Max :

375W Tc

Threshold Voltage :

2V

Rds On (Max) @ Id, Vgs :

2m Ω @ 150A, 10V

Manufacturer Package Identifier :

PG-HSOF-8

Packaging :

Tape and Reel (TR)

Power Dissipation :

375W

Continuous Drain Current (ID) :

300A

Current - Continuous Drain (Id) @ 25°C :

300A Tc

Halogen Free :

Halogen Free

Max Dual Supply Voltage :

100V

Height :

2.4mm

Additional Feature :

ULTRA LOW RESISTANCE

Mount :

Surface Mount

Number of Channels :

1

FET Type :

N-Channel

JESD-609 Code :

e3

Factory Lead Time :

18 Weeks

Case Connection :

DRAIN

Lead Free :

Contains Lead

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.02Ohm

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

100V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Published :

2012

Time@Peak Reflow Temperature-Max (s) :

40