IPT015N10N5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Rise Time :

30ns

Number of Channels :

1

Turn-Off Delay Time :

85 ns

Number of Elements :

1

Factory Lead Time :

18 Weeks

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

300A

Max Dual Supply Voltage :

100V

Number of Pins :

8

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

211nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Lead Free :

Contains Lead

Published :

2013

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Mount :

Surface Mount

Pbfree Code :

yes

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

300A Tc

Halogen Free :

Halogen Free

Package / Case :

8-PowerSFN

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

16000pF @ 50V

Series :

OptiMOS™

Transistor Application :

SWITCHING

Turn On Delay Time :

36 ns

Reach Compliance Code :

not_compliant

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

652 mJ

Power Dissipation-Max :

375W Tc

Rds On (Max) @ Id, Vgs :

1.5m Ω @ 150A, 10V

Terminal Form :

Flat

Drain Current-Max (Abs) (ID) :

32A

Fall Time (Typ) :

30 ns

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3.8V @ 250μA