IPT012N08N5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

1.2m Ω @ 150A, 10V

Halogen Free :

Halogen Free

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

80V

Current - Continuous Drain (Id) @ 25°C :

300A Tc

Threshold Voltage :

3V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-PowerSFN

Case Connection :

DRAIN

Mount :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Contains Lead

Turn-Off Delay Time :

82 ns

Terminal Form :

Flat

JESD-609 Code :

e3

Max Dual Supply Voltage :

80V

Transistor Element Material :

SILICON

Height :

2.4mm

Drain Current-Max (Abs) (ID) :

52A

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

300A

Element Configuration :

Single

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

223nC @ 10V

Rise Time :

31ns

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Number of Pins :

8

JESD-30 Code :

R-PSSO-F2

Fall Time (Typ) :

30 ns

Manufacturer Package Identifier :

PG-HSOF-8

Number of Terminations :

2

Max Junction Temperature (Tj) :

175°C

Power Dissipation-Max :

375W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

not_compliant

Factory Lead Time :

18 Weeks

Published :

2013

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

17000pF @ 40V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Pbfree Code :

yes

Power Dissipation :

375W

Number of Channels :

1

Series :

OptiMOS™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Delay Time :

35 ns

Vgs(th) (Max) @ Id :

3.8V @ 280μA