IPT012N06NATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

124nC @ 10V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

9750pF @ 30V

Factory Lead Time :

18 Weeks

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

3.3V @ 143μA

ECCN Code :

EAR99

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

420 mJ

DS Breakdown Voltage-Min :

60V

Package / Case :

8-PowerSFN

Rds On (Max) @ Id, Vgs :

1.2m Ω @ 100A, 10V

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

41A

Transistor Element Material :

SILICON

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Power Dissipation-Max :

214W Tc

Vgs (Max) :

±20V

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

240A Tc

JESD-30 Code :

R-PSSO-F2

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Flat

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0012Ohm

Case Connection :

DRAIN

Series :

OptiMOS™

Pulsed Drain Current-Max (IDM) :

960A

Published :

2013

Drain to Source Voltage (Vdss) :

60V