IPT007N06NATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

0.75m Ω @ 150A, 10V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Max Dual Supply Voltage :

60V

Series :

OptiMOS™

Published :

2012

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Gate Charge (Qg) (Max) @ Vgs :

287nC @ 10V

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

52A

Lead Free :

Contains Lead

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

375W

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

300A

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

300A Tc

Halogen Free :

Halogen Free

Mount :

Surface Mount

Terminal Form :

Flat

Factory Lead Time :

18 Weeks

Number of Pins :

8

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

16000pF @ 30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3.3V @ 280μA

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

375W Tc

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.00075Ohm

JESD-30 Code :

R-PSSO-F2

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Package / Case :

8-PowerSFN