IPT007N06NATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Halogen Free :

Halogen Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Published :

2012

Power Dissipation-Max :

375W Tc

Reach Compliance Code :

not_compliant

Series :

OptiMOS™

Transistor Element Material :

SILICON

Package / Case :

8-PowerSFN

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

18 Weeks

Gate Charge (Qg) (Max) @ Vgs :

287nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

300A Tc

Continuous Drain Current (ID) :

300A

Input Capacitance (Ciss) (Max) @ Vds :

16000pF @ 30V

FET Type :

N-Channel

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

0.75m Ω @ 150A, 10V

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Terminal Form :

Flat

Lead Free :

Contains Lead

JESD-30 Code :

R-PSSO-F2

Max Dual Supply Voltage :

60V

Drain Current-Max (Abs) (ID) :

52A

Power Dissipation :

375W

Number of Pins :

8

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.00075Ohm

Number of Terminations :

2

Vgs(th) (Max) @ Id :

3.3V @ 280μA