IPS12CN10LG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

69A

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Terminal Position :

Single

Power Dissipation :

125W

Number of Elements :

1

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

5600pF @ 50V

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

69A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Package / Case :

TO-251-3 Stub Leads, IPak

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSIP-T3

Series :

OptiMOS™

Additional Feature :

LOGIC LEVL COMPATIBLE

ECCN Code :

EAR99

FET Type :

N-Channel

Terminal Finish :

MATTE TIN

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

125W Tc

Pulsed Drain Current-Max (IDM) :

276A

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

2.4V @ 83μA

Number of Terminations :

3

Pbfree Code :

yes

Reach Compliance Code :

Unknown

Published :

2011

Rds On (Max) @ Id, Vgs :

11.8m Ω @ 69A, 10V

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

100V