IPS118N10N G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 83μA

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

4320pF @ 50V

Mounting Type :

Through Hole

Package / Case :

TO-251-3 Stub Leads, IPak

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

100V

Power Dissipation-Max :

125W Tc

Drain Current-Max (Abs) (ID) :

75A

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

11.8m Ω @ 75A, 10V

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Series :

OptiMOS™

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

300A

Number of Terminations :

3

Drain-source On Resistance-Max :

0.0118Ohm

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-251AA

Avalanche Energy Rating (Eas) :

120 mJ

Drain to Source Voltage (Vdss) :

100V

JESD-30 Code :

R-PSIP-T3

Published :

2008

Qualification Status :

Not Qualified

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Pin Count :

3

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

75A Tc