IPS110N12N3GBKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Mount :

Through Hole

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

11m Ω @ 75A, 10V

Pin Count :

4

RoHS Status :

RoHS Compliant

Package / Case :

TO-251-3 Stub Leads, IPak

Terminal Position :

Single

Published :

2008

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

120 mJ

Transistor Element Material :

SILICON

Power Dissipation-Max :

136W Tc

Lead Free :

Contains Lead

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Halogen Free :

Not Halogen Free

Pbfree Code :

No

Number of Pins :

3

Drain-source On Resistance-Max :

0.011Ohm

Input Capacitance (Ciss) (Max) @ Vds :

4310pF @ 60V

Vgs(th) (Max) @ Id :

4V @ 83μA

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Continuous Drain Current (ID) :

75A

Max Dual Supply Voltage :

120V

Series :

OptiMOS™

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3