IPS10N03LA G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0104Ohm

Power Dissipation-Max :

52W Tc

Rds On (Max) @ Id, Vgs :

10.4m Ω @ 30A, 10V

JESD-609 Code :

e3

JEDEC-95 Code :

TO-251AA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

MATTE TIN

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

TO-251-3 Stub Leads, IPak

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

210A

Number of Terminations :

3

Mounting Type :

Through Hole

Packaging :

Tube

FET Type :

N-Channel

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

1358pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 5V

Drain to Source Voltage (Vdss) :

25V

Transistor Application :

SWITCHING

Pin Count :

3

Published :

2008

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Series :

OptiMOS™

Number of Elements :

1

Avalanche Energy Rating (Eas) :

80 mJ

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

25V

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

30A

Vgs(th) (Max) @ Id :

2V @ 20μA

JESD-30 Code :

R-PSIP-T3

Reach Compliance Code :

Compliant

Additional Feature :

LOGIC LEVEL COMPATIBLE