IPS09N03LB G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

200A

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 15V

Pin Count :

3

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Package / Case :

TO-251-3 Stub Leads, IPak

Drain Current-Max (Abs) (ID) :

50A

Drain-source On Resistance-Max :

0.0144Ohm

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Drain to Source Voltage (Vdss) :

30V

Number of Terminations :

3

Reach Compliance Code :

Compliant

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

57 mJ

Power Dissipation-Max :

58W Tc

JESD-609 Code :

e3

JESD-30 Code :

R-PSIP-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Surface Mount :

No

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

30V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2V @ 20μA

ECCN Code :

EAR99

JEDEC-95 Code :

TO-251AA

Rds On (Max) @ Id, Vgs :

9.3m Ω @ 50A, 10V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS™

Additional Feature :

LOGIC LEVEL COMPATIBLE

Vgs (Max) :

±20V

Published :

2008