IPS090N03LGAKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

30V

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

70 mJ

Terminal Position :

Single

JESD-609 Code :

e3

HTS Code :

8541.29.00.95

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Power Dissipation-Max :

42W Tc

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-251-3 Stub Leads, IPak

Power Dissipation :

42W

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 15V

Pulsed Drain Current-Max (IDM) :

280A

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Pbfree Code :

No

Number of Pins :

3

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant

Mount :

Through Hole

Number of Elements :

1

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

9m Ω @ 30A, 10V

Packaging :

Tube

Series :

OptiMOS™

Vgs (Max) :

±20V

Published :

2008

Continuous Drain Current (ID) :

40A

Qualification Status :

Not Qualified

ECCN Code :

EAR99