IPS03N03LA G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

360A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-251-3 Stub Leads, IPak

Qualification Status :

Not Qualified

Series :

OptiMOS™

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

25V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 5V

Surface Mount :

No

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

FET Type :

N-Channel

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

300 mJ

Published :

2008

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 70μA

Packaging :

Tube

Terminal Finish :

MATTE TIN

Drain Current-Max (Abs) (ID) :

90A

JESD-30 Code :

R-PSIP-T3

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Terminal Position :

Single

Additional Feature :

LOGIC LEVEL COMPATIBLE

DS Breakdown Voltage-Min :

25V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Reach Compliance Code :

Compliant

Power Dissipation-Max :

115W Tc

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 15V

Rds On (Max) @ Id, Vgs :

3.4m Ω @ 60A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0053Ohm