IPS031N03L G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-251-3 Stub Leads, IPak

Peak Reflow Temperature (Cel) :

260

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

3.1m Ω @ 30A, 10V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Vgs (Max) :

±20V

JESD-30 Code :

R-PSIP-T3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2008

Drain Current-Max (Abs) (ID) :

90A

DS Breakdown Voltage-Min :

30V

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

5300pF @ 15V

Pin Count :

3

FET Type :

N-Channel

Terminal Finish :

MATTE TIN

Drain to Source Voltage (Vdss) :

30V

Reach Compliance Code :

Compliant

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

60 mJ

Pulsed Drain Current-Max (IDM) :

400A

Surface Mount :

No

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.004ohm

HTS Code :

8541.29.00.95

Power Dissipation-Max :

94W Tc

Transistor Application :

SWITCHING

Series :

OptiMOS™

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Packaging :

Tube

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE