IPP260N06N3G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Series :

OptiMOS™3

Manufacturer :

Infineon Technologies AG

Package Shape :

RECTANGULAR

Gate Charge (Qg) (Max) @ Vgs :

15 nC @ 10 V

Number of Elements :

1

Qualification Status :

Not Qualified

Number of Terminals :

3

ECCN Code :

EAR99

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Vgs (Max) :

±20V

Product Status :

Active

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max (Abs) :

36 W

Vgs(th) (Max) @ Id :

4V @ 11µA

Rds On (Max) @ Id, Vgs :

25.7mOhm @ 27A, 10V

Operating Temperature :

-55°C ~ 175°C (TJ)

Drain Current-Max (Abs) (ID) :

27 A

FET Feature :

-

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Compliant

Terminal Finish :

MATTE TIN

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1200 pF @ 30 V

Peak Reflow Temperature (Cel) :

260

Supplier Device Package :

PG-TO220-3

Subcategory :

FET General Purpose Power

Drain to Source Voltage (Vdss) :

60 V

Power Dissipation (Max) :

36W (Tc)

Package / Case :

TO-220-3

Drive Voltage (Max Rds On, Min Rds On) :

10V

Technology :

MOSFET (Metal Oxide)

Pin Count :

3

Package :

Bulk

Current - Continuous Drain (Id) @ 25°C :

27A (Tc)

Avalanche Energy Rating (Eas) :

13 mJ

Drain-source On Resistance-Max :

0.026 Ω

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Through Hole

FET Type :

N-Channel

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

108 A

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel

DS Breakdown Voltage-Min :

60 V

Terminal Form :

THROUGH-HOLE