IPF13N03LA G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain Current-Max (Abs) (ID) :

30A

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

12.8m Ω @ 30A, 10V

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Additional Feature :

LOGIC LEVEL COMPATIBLE

Avalanche Energy Rating (Eas) :

60 mJ

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

Compliant

Surface Mount :

yes

Published :

2008

Drain-source On Resistance-Max :

0.0128Ohm

JESD-609 Code :

e3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G3

Input Capacitance (Ciss) (Max) @ Vds :

1043pF @ 15V

Vgs(th) (Max) @ Id :

2V @ 20μA

Pin Count :

4

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

25V

Pulsed Drain Current-Max (IDM) :

210A

FET Type :

N-Channel

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

46W Tc

DS Breakdown Voltage-Min :

25V

Transistor Application :

SWITCHING

Terminal Position :

Single

Number of Elements :

1

Series :

OptiMOS™