IPD160N04LGBTMA1

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Mfr.Part #
IPD160N04LGBTMA1
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 40V 30A TO252-3
Stock
1,760
In Stock :
1,760

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSSO-G2
Number of Terminations :
2
Drain Current-Max (Abs) (ID) :
30A
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Vgs(th) (Max) @ Id :
2V @ 10µA
Operating Temperature :
-55°C~175°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
yes
JEDEC-95 Code :
TO-252AA
Reach Compliance Code :
Unknown
Avalanche Energy Rating (Eas) :
5 mJ
Drain to Source Voltage (Vdss) :
40V
FET Type :
N-Channel
Published :
2011
Vgs (Max) :
±20V
Transistor Application :
SWITCHING
DS Breakdown Voltage-Min :
40V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Qualification Status :
Not Qualified
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
1200pF @ 20V
Additional Feature :
LOGIC LEVEL COMPATIBLE
Pin Count :
4
RoHS Status :
RoHS Compliant
Series :
OptiMOS™
Packaging :
Tape and Reel (TR)
Mounting Type :
Surface Mount
Configuration :
SINGLE WITH BUILT-IN DIODE
Rds On (Max) @ Id, Vgs :
16m Ω @ 30A, 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Drain-source On Resistance-Max :
0.016Ohm
Power Dissipation-Max :
31W Tc
Terminal Form :
Gull wing
Pulsed Drain Current-Max (IDM) :
210A
Case Connection :
DRAIN
Pbfree Code :
No
ECCN Code :
EAR99
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Single
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheets
IPD160N04LGBTMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPD160N04LGBTMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, IPD160N04LGBTMA1 pinout, IPD160N04LGBTMA1 datasheet PDF, IPD160N04LGBTMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPD160N04LGBTMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPD160N04LGBTMA1


N-Channel Tape & Reel (TR) 16m Ω @ 30A, 10V ±20V 1200pF @ 20V 15nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63

IPD160N04LGBTMA1 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 5 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1200pF @ 20V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 30A.Peak drain current is 210A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 40V.For this transistor to work, a voltage 40V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

IPD160N04LGBTMA1 Features


the avalanche energy rating (Eas) is 5 mJ
based on its rated peak drain current 210A.
a 40V drain to source voltage (Vdss)


IPD160N04LGBTMA1 Applications


There are a lot of Infineon Technologies
IPD160N04LGBTMA1 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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