IPD160N04LGBTMA1
- Mfr.Part #
- IPD160N04LGBTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 30A TO252-3
- Stock
- 1,760
- In Stock :
- 1,760
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminations :
- 2
- Drain Current-Max (Abs) (ID) :
- 30A
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Vgs(th) (Max) @ Id :
- 2V @ 10µA
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- yes
- JEDEC-95 Code :
- TO-252AA
- Reach Compliance Code :
- Unknown
- Avalanche Energy Rating (Eas) :
- 5 mJ
- Drain to Source Voltage (Vdss) :
- 40V
- FET Type :
- N-Channel
- Published :
- 2011
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 40V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 20V
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Pin Count :
- 4
- RoHS Status :
- RoHS Compliant
- Series :
- OptiMOS™
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 30A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain-source On Resistance-Max :
- 0.016Ohm
- Power Dissipation-Max :
- 31W Tc
- Terminal Form :
- Gull wing
- Pulsed Drain Current-Max (IDM) :
- 210A
- Case Connection :
- DRAIN
- Pbfree Code :
- No
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheets
- IPD160N04LGBTMA1

N-Channel Tape & Reel (TR) 16m Ω @ 30A, 10V ±20V 1200pF @ 20V 15nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD160N04LGBTMA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 5 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1200pF @ 20V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 30A.Peak drain current is 210A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 40V.For this transistor to work, a voltage 40V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
IPD160N04LGBTMA1 Features
the avalanche energy rating (Eas) is 5 mJ
based on its rated peak drain current 210A.
a 40V drain to source voltage (Vdss)
IPD160N04LGBTMA1 Applications
There are a lot of Infineon Technologies
IPD160N04LGBTMA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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