IPD160N04LG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

1 Week

Reach Compliance Code :

Compliant

Package Shape :

RECTANGULAR

Power Dissipation (Max) :

31W (Tc)

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Surface Mount :

yes

Product Status :

Active

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

210 A

Polarity/Channel Type :

N-Channel

Rds On (Max) @ Id, Vgs :

16mOhm @ 30A, 10V

Supplier Device Package :

PG-TO252-3

JESD-609 Code :

e3

Package :

Bulk

Vgs(th) (Max) @ Id :

2V @ 10µA

JEDEC-95 Code :

TO-252AA

Manufacturer :

Infineon Technologies AG

Pin Count :

4

DS Breakdown Voltage-Min :

40 V

FET Type :

N-Channel

Number of Elements :

1

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

15 nC @ 10 V

Current - Continuous Drain (Id) @ 25°C :

30A (Tc)

FET Feature :

-

Case Connection :

DRAIN

Terminal Position :

Single

Mounting Type :

Surface Mount

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

5 mJ

Number of Terminals :

2

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs) :

31 W

Terminal Finish :

MATTE TIN

Drain Current-Max (Abs) (ID) :

30 A

Subcategory :

FET General Purpose Power

Input Capacitance (Ciss) (Max) @ Vds :

1200 pF @ 20 V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drain-source On Resistance-Max :

0.016 Ω

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Operating Temperature :

-55°C ~ 175°C (TJ)

Drain to Source Voltage (Vdss) :

40 V

Series :

OptiMOS® 3