IPD15N06S2L64ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Max Dual Supply Voltage :

55V

Vgs (Max) :

±20V

Reach Compliance Code :

not_compliant

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Power Dissipation-Max :

47W Tc

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

64m Ω @ 13A, 10V

Halogen Free :

Halogen Free

Packaging :

Tape and Reel (TR)

Series :

Automotive, AEC-Q101, OptiMOS™

Factory Lead Time :

10 Weeks

Terminal Position :

Single

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

354pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pbfree Code :

yes

Number of Elements :

1

Published :

2006

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

43 mJ

Drain Current-Max (Abs) (ID) :

19A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.085Ohm

Vgs(th) (Max) @ Id :

2V @ 14µA

Number of Terminations :

2

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Pulsed Drain Current-Max (IDM) :

76A

JESD-30 Code :

R-PSSO-G2