IPD15N06S2L64ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

64m Ω @ 13A, 10V

Terminal Position :

Single

Number of Elements :

1

Power Dissipation-Max :

47W Tc

Continuous Drain Current (ID) :

19A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

55V

Number of Pins :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.085Ohm

Pulsed Drain Current-Max (IDM) :

76A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Series :

OptiMOS™

Published :

2006

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

55V

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

354pF @ 25V

Vgs(th) (Max) @ Id :

2V @ 14µA

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reference Standard :

AEC-Q101

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Additional Feature :

ULTRA LOW RESISTANCE

ECCN Code :

EAR99