IPD14N06S280ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

43 mJ

Case Connection :

DRAIN

Power Dissipation-Max :

47W Tc

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.08Ohm

Transistor Element Material :

SILICON

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

17A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Published :

2006

Vgs(th) (Max) @ Id :

4V @ 14μA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

55V

Rds On (Max) @ Id, Vgs :

80m Ω @ 7A, 10V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

55V

Surface Mount :

yes

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

68A

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

OptiMOS™

Input Capacitance (Ciss) (Max) @ Vds :

293pF @ 25V