IPD14N06S2-80

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

80m Ω @ 7A, 10V

Power Dissipation-Max :

47W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

17ns

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

17A Tc

FET Type :

N-Channel

Case Connection :

DRAIN

Mount :

Surface Mount

Turn On Delay Time :

6 ns

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Contains Lead

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS™

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

293pF @ 25V

Turn-Off Delay Time :

15 ns

Continuous Drain Current (ID) :

17A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Channels :

1

Number of Pins :

3

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

55V

Fall Time (Typ) :

20 ns

Factory Lead Time :

10 Weeks

Pulsed Drain Current-Max (IDM) :

68A

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Number of Terminations :

2

Length :

6.5mm

Reach Compliance Code :

not_compliant

Threshold Voltage :

2.1V

Max Junction Temperature (Tj) :

175°C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.08Ohm

Max Dual Supply Voltage :

55V

Height :

2.5mm

Vgs(th) (Max) @ Id :

4V @ 14μA

RoHS Status :

ROHS3 Compliant

Published :

2006

Width :

6.22mm

REACH SVHC :

No SVHC

Power Dissipation :

47W

Halogen Free :

Halogen Free