IPD144N06NGBTMA1
- Mfr.Part #
- IPD144N06NGBTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 50A TO252-3
- Stock
- 12,427
- In Stock :
- 12,427
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 14.4m Ω @ 50A, 10V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Terminal Finish :
- MATTE TIN
- Pulsed Drain Current-Max (IDM) :
- 200A
- Vgs(th) (Max) @ Id :
- 4V @ 80μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 1900pF @ 30V
- Power Dissipation-Max :
- 136W Tc
- Published :
- 2011
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Number of Terminations :
- 2
- Case Connection :
- DRAIN
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Unknown
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 135W
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 240 mJ
- Drain to Source Voltage (Vdss) :
- 60V
- Terminal Position :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Factory Lead Time :
- 25 Weeks
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Gate Charge (Qg) (Max) @ Vgs :
- 54nC @ 10V
- Series :
- OptiMOS™
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 50A
- Operating Temperature :
- -55°C~175°C TJ
- Additional Feature :
- AVALANCHE RATED
- DS Breakdown Voltage-Min :
- 60V
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-252AA
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- RoHS Compliant
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Pin Count :
- 4
- Datasheets
- IPD144N06NGBTMA1

N-Channel Tape & Reel (TR) 14.4m Ω @ 50A, 10V ±20V 1900pF @ 30V 54nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD144N06NGBTMA1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 240 mJ.A device's maximal input capacitance is 1900pF @ 30V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 50A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 200A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60V.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IPD144N06NGBTMA1 Features
the avalanche energy rating (Eas) is 240 mJ
a continuous drain current (ID) of 50A
based on its rated peak drain current 200A.
a 60V drain to source voltage (Vdss)
IPD144N06NGBTMA1 Applications
There are a lot of Infineon Technologies
IPD144N06NGBTMA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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