IPD135N08N3GBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Pin Count :

4

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Reach Compliance Code :

Compliant

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pulsed Drain Current-Max (IDM) :

180A

Avalanche Energy Rating (Eas) :

50 mJ

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.0135Ohm

Power Dissipation-Max :

79W Tc

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 45A, 10V

Series :

OptiMOS™

Vgs (Max) :

±20V

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

80V

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-252AA

Transistor Application :

SWITCHING

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Vgs(th) (Max) @ Id :

3.5V @ 33μA

Published :

2011

Number of Terminations :

2

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

80V

Pbfree Code :

No

Input Capacitance (Ciss) (Max) @ Vds :

1730pF @ 40V

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

45A