IPD12N03LB G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

OptiMOS™

RoHS Status :

RoHS Compliant

Additional Feature :

LOGIC LEVEL COMPATIBLE

DS Breakdown Voltage-Min :

30V

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 15V

Reach Compliance Code :

Compliant

Pin Count :

4

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

120A

Terminal Finish :

MATTE TIN

Drain-source On Resistance-Max :

0.0116Ohm

Terminal Position :

Single

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

52W Tc

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

30A

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

TO-252AA

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 5V

Vgs(th) (Max) @ Id :

2V @ 20μA

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Published :

2008

Avalanche Energy Rating (Eas) :

64 mJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

11.6m Ω @ 30A, 10V

Vgs (Max) :

±20V

Terminal Form :

Gull wing

FET Type :

N-Channel

Number of Terminations :

2