IPD12CNE8N G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

OptiMOS™

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

67A

JEDEC-95 Code :

TO-252AA

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

67A Tc

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0124Ohm

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

12.4m Ω @ 67A, 10V

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

DS Breakdown Voltage-Min :

85V

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 83μA

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

4340pF @ 40V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

85V

Published :

2008

Pulsed Drain Current-Max (IDM) :

268A

Power Dissipation-Max :

125W Tc

Reach Compliance Code :

Compliant

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

154 mJ