IPD12CN10NGATMA1
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- Mfr.Part #
- IPD12CN10NGATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 67A TO252-3
- Stock
- 24,384
- In Stock ：
- 24,384
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 67A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 268A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4320pF @ 50V
- REACH SVHC :
- No SVHC
- JESD-30 Code :
- R-PSSO-G2
- Fall Time (Typ) :
- 8 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 4V @ 83μA
- Drain-source On Resistance-Max :
- 0.0124Ohm
- Reach Compliance Code :
- not_compliant
- Contact Plating :
- Tin
- Series :
- OptiMOS™
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 10V
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Published :
- 2008
- Lead Free :
- Contains Lead
- Current - Continuous Drain (Id) @ 25°C :
- 67A Tc
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Vgs (Max) :
- ±20V
- Halogen Free :
- Halogen Free
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 154 mJ
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- Max Dual Supply Voltage :
- 100V
- Case Connection :
- DRAIN
- Rise Time :
- 21ns
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 125W
- Terminal Form :
- Gull wing
- JEDEC-95 Code :
- TO-252AA
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 17 ns
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Threshold Voltage :
- 3V
- Power Dissipation-Max :
- 125W Tc
- Turn-Off Delay Time :
- 32 ns
- FET Type :
- N-Channel
- Factory Lead Time :
- 18 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 12.4m Ω @ 67A, 10V
- Drain to Source Breakdown Voltage :
- 100V
- Number of Pins :
- 3
- Additional Feature :
- FAST SWITCHING
- Datasheets
- IPD12CN10NGATMA1
N-Channel Tape & Reel (TR) 12.4m Ω @ 67A, 10V ±20V 4320pF @ 50V 65nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD12CN10NGATMA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 154 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4320pF @ 50V.This device conducts a continuous drain current (ID) of 67A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 32 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 268A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 17 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 100V power, it supports a dual voltage supply of up to maximum.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPD12CN10NGATMA1 Features
the avalanche energy rating (Eas) is 154 mJ
a continuous drain current (ID) of 67A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 32 ns
based on its rated peak drain current 268A.
a threshold voltage of 3V
IPD12CN10NGATMA1 Applications
There are a lot of Infineon Technologies
IPD12CN10NGATMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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