IPD127N06LGBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

Drain to Source Voltage (Vdss) :

60V

Terminal Form :

Gull wing

Reach Compliance Code :

not_compliant

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Published :

2011

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0127Ohm

Factory Lead Time :

39 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

240 mJ

DS Breakdown Voltage-Min :

60V

FET Type :

N-Channel

JEDEC-95 Code :

TO-252AA

Rds On (Max) @ Id, Vgs :

12.7m Ω @ 50A, 10V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

136W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2300pF @ 30V

Qualification Status :

Not Qualified

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1

Vgs (Max) :

±20V

Pin Count :

4

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2V @ 80μA

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Number of Terminations :

2

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

No

Pulsed Drain Current-Max (IDM) :

200A

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

50A

Series :

OptiMOS™

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3