IPD122N10N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3.5V @ 46µA

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 50V

Case Connection :

DRAIN

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-252AA

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Series :

OptiMOS™

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0122Ohm

Current - Continuous Drain (Id) @ 25°C :

59A Tc

Mounting Type :

Surface Mount

Published :

2008

Terminal Form :

Gull wing

Factory Lead Time :

18 Weeks

Power Dissipation-Max :

94W Tc

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

59A

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

ECCN Code :

EAR99

Halogen Free :

Halogen Free

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Max Dual Supply Voltage :

100V

Number of Terminations :

2

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

70 mJ

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Lead Free :

Contains Lead

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

12.2m Ω @ 46A, 10V