IPD11DP10NMATMA1

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Mfr.Part #
IPD11DP10NMATMA1
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRENCH >=100V PG-TO252-3
Stock
5
In Stock :
5

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Brand :
Infineon Technologies
Vgs (Max) :
±20V
Rds On (Max) @ Id, Vgs :
111mOhm @ 18A, 10V
RoHS :
Details
Package :
Digi-Reel?
Gate Charge (Qg) (Max) @ Vgs :
74 nC @ 10 V
Mounting Style :
SMD/SMT
Number of Elements per Chip :
1
Channel Mode :
Enhancement
Channel Type :
P
Input Capacitance (Ciss) (Max) @ Vds :
3200 pF @ 50 V
Operating Temperature :
-55°C ~ 175°C (TJ)
Product :
MOSFET
Drain to Source Voltage (Vdss) :
100 V
Subcategory :
MOSFETs
Maximum Operating Temperature :
+ 175 C
Continuous Drain Current Id :
22A
Number of Channels :
1 Channel
Mounting Type :
Surface Mount
Packaging :
Cut Tape
Series :
OptiMOS?
MSL :
MSL 1 - Unlimited
Minimum Operating Temperature :
- 55 C
Product Type :
MOSFET
Power Dissipation (Max) :
3W (Ta), 125W (Tc)
Qualification :
-
Current - Continuous Drain (Id) @ 25°C :
3.4A (Ta), 22A (Tc)
Product Status :
Active
Power Dissipation :
125W
Vgs(th) (Max) @ Id :
4V @ 1.7mA
Supplier Device Package :
PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On) :
10V
Base Product Number :
IPD11D
Package Type :
DPAK (TO-252)
Manufacturer :
Infineon
FET Type :
P-Channel
FET Feature :
-
Transistor Polarity :
P-Channel
Product Category :
MOSFET
Pin Count :
3
Datasheets
IPD11DP10NMATMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPD11DP10NMATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C ~ 175°C (TJ), Number of Channels:1 Channel, Mounting Type:Surface Mount, IPD11DP10NMATMA1 pinout, IPD11DP10NMATMA1 datasheet PDF, IPD11DP10NMATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPD11DP10NMATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPD11DP10NMATMA1


P-Channel Cut Tape 111mOhm @ 18A, 10V ±20V 3200 pF @ 50 V 74 nC @ 10 V 100 V TO-252-3, DPak (2 Leads + Tab), SC-63

IPD11DP10NMATMA1 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3200 pF @ 50 V.Operating this transistor requires a 100 V drain to source voltage (Vdss).

IPD11DP10NMATMA1 Features


a 100 V drain to source voltage (Vdss)


IPD11DP10NMATMA1 Applications


There are a lot of Infineon Technologies
IPD11DP10NMATMA1 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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