IPD110N12N3GBUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Pbfree Code :

No

Number of Elements :

1

Number of Terminations :

2

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Series :

OptiMOS™

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

8 ns

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Drain to Source Voltage (Vdss) :

120V

Pin Count :

4

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

300A

Input Capacitance (Ciss) (Max) @ Vds :

4310pF @ 60V

Published :

2011

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

136W Tc

ECCN Code :

EAR99

Mount :

Surface Mount

Transistor Application :

SWITCHING

Terminal Position :

Single

Turn-Off Delay Time :

24 ns

Rds On (Max) @ Id, Vgs :

11m Ω @ 75A, 10V

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 83μA

Turn On Delay Time :

16 ns

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Power Dissipation :

136W

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

75A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount