IPD110N12N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.011Ohm

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PSSO-G2

Series :

OptiMOS™

Halogen Free :

Halogen Free

Case Connection :

DRAIN

Power Dissipation-Max :

136W Tc

Turn-Off Delay Time :

24 ns

Input Capacitance (Ciss) (Max) @ Vds :

4310pF @ 60V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Max Dual Supply Voltage :

120V

Factory Lead Time :

18 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

3V @ 83μA (Typ)

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

11m Ω @ 75A, 10V

Lead Free :

Contains Lead

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Fall Time (Typ) :

8 ns

Number of Terminations :

2

FET Type :

N-Channel

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Published :

2015

JESD-609 Code :

e3

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

120 mJ

Continuous Drain Current (ID) :

75A

Turn On Delay Time :

16 ns

Mount :

Surface Mount

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V