IPD10N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1358pF @ 15V

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Transistor Element Material :

SILICON

Current Rating :

30A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

30A

JESD-609 Code :

e0

Operating Temperature :

-55°C~175°C TJ

Series :

OptiMOS™

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

220

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

80 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

52W Tc

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

10.4m Ω @ 30A, 10V

RoHS Status :

Non-RoHS Compliant

Terminal Finish :

Tin/Lead (Sn/Pb)

Mount :

Surface Mount

ECCN Code :

EAR99

JEDEC-95 Code :

TO-252AA

Pulsed Drain Current-Max (IDM) :

210A

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.0104Ohm

Lead Free :

Contains Lead

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

2V @ 20μA

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Number of Terminations :

2

Pin Count :

4

Published :

2008

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 5V

Voltage - Rated DC :

25V