IPD100N06S403ATMA2
- Mfr.Part #
- IPD100N06S403ATMA2
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 100A TO252-3-11
- Stock
- 14,025
- In Stock :
- 14,025
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 400A
- JESD-609 Code :
- e3
- Factory Lead Time :
- 16 Weeks
- Rds On (Max) @ Id, Vgs :
- 3.5m Ω @ 100A, 10V
- Halogen Free :
- Halogen Free
- Power Dissipation-Max :
- 150W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Number of Channels :
- 1
- Turn-Off Delay Time :
- 40 ns
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Position :
- Single
- Reach Compliance Code :
- not_compliant
- Power Dissipation :
- 150W
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 128nC @ 10V
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 2
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 10400pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Max Junction Temperature (Tj) :
- 175°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 90µA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn On Delay Time :
- 30 ns
- JESD-30 Code :
- R-PSSO-G2
- Continuous Drain Current (ID) :
- 100A
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Max Dual Supply Voltage :
- 60V
- Drain to Source Breakdown Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2005
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Height :
- 2.5mm
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Weight :
- 3.949996g
- Datasheets
- IPD100N06S403ATMA2

N-Channel Tape & Reel (TR) 3.5m Ω @ 100A, 10V ±20V 10400pF @ 25V 128nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD100N06S403ATMA2 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 10400pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100A amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [40 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 400A.A turn-on delay time of 30 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 60V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPD100N06S403ATMA2 Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 400A.
IPD100N06S403ATMA2 Applications
There are a lot of Infineon Technologies
IPD100N06S403ATMA2 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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