IPD100N06S403ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

ULTRA-LOW RESISTANCE

Vgs(th) (Max) @ Id :

4V @ 90µA

Series :

OptiMOS™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

128nC @ 10V

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

300 mJ

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

DS Breakdown Voltage-Min :

60V

Power Dissipation-Max :

150W Tc

Published :

2005

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

ECCN Code :

EAR99

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

10400pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Surface Mount :

yes

Drain-source On Resistance-Max :

0.0035Ohm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 100A, 10V

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

400A

Drain to Source Voltage (Vdss) :

60V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

100A