IPD100N04S402ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2004

ECCN Code :

EAR99

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

40V

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Factory Lead Time :

16 Weeks

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

2m Ω @ 100A, 10V

JESD-609 Code :

e3

FET Type :

N-Channel

Reference Standard :

AEC-Q101

Power Dissipation-Max :

150W Tc

Vgs(th) (Max) @ Id :

4V @ 95µA

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

9430pF @ 25V

Number of Terminations :

2

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

118nC @ 10V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

OptiMOS™

Vgs (Max) :

±20V

Reach Compliance Code :

not_compliant

Surface Mount :

yes

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

40V

Avalanche Energy Rating (Eas) :

440 mJ

Drain-source On Resistance-Max :

0.002Ohm

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

400A

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

100A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED