IPC80N04S403ATMA1
- Mfr.Part #
- IPC80N04S403ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 80A TDSON-8-23
- Stock
- 48,000
- In Stock :
- 48,000
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.0033Ohm
- Lead Free :
- Contains Lead
- Pbfree Code :
- yes
- Pulsed Drain Current-Max (IDM) :
- 320A
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- 8-PowerVDFN
- Packaging :
- Tape and Reel (TR)
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Transistor Element Material :
- SILICON
- Number of Pins :
- 8
- Vgs(th) (Max) @ Id :
- 4V @ 60μA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 100W Tc
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 80A
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2013
- Vgs (Max) :
- ±20V
- RoHS Status :
- RoHS Compliant
- Terminal Form :
- Flat
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 5720pF @ 25V
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 215 mJ
- JESD-30 Code :
- R-PDSO-F3
- Terminal Position :
- Dual
- Max Dual Supply Voltage :
- 40V
- Gate Charge (Qg) (Max) @ Vgs :
- 71nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Halogen Free :
- Halogen Free
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 3.3m Ω @ 40A, 10V
- Datasheets
- IPC80N04S403ATMA1
N-Channel Tape & Reel (TR) 3.3m Ω @ 40A, 10V ±20V 5720pF @ 25V 71nC @ 10V 8-PowerVDFN
IPC80N04S403ATMA1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 215 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5720pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 80A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 320A.Powered by 40V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPC80N04S403ATMA1 Features
the avalanche energy rating (Eas) is 215 mJ
a continuous drain current (ID) of 80A
based on its rated peak drain current 320A.
IPC80N04S403ATMA1 Applications
There are a lot of Infineon Technologies
IPC80N04S403ATMA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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