IPC100N04S51R9ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Pulsed Drain Current-Max (IDM) :

400A

Drain Current-Max (Abs) (ID) :

100A

Power Dissipation-Max :

100W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

DS Breakdown Voltage-Min :

40V

Input Capacitance (Ciss) (Max) @ Vds :

3770pF @ 25V

ECCN Code :

EAR99

Published :

2016

Case Connection :

DRAIN

Vgs (Max) :

±20V

Terminal Position :

Dual

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

130 mJ

Factory Lead Time :

16 Weeks

Terminal Form :

Flat

Series :

Automotive, AEC-Q101, OptiMOS™

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

7V 10V

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-F3

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

1.9m Ω @ 50A, 10V

Package / Case :

8-PowerTDFN

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

3.4V @ 50μA

Drain to Source Voltage (Vdss) :

40V

Mounting Type :

Surface Mount

Surface Mount :

yes

Drain-source On Resistance-Max :

0.0023Ohm

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED