IPBE65R115CFD7AATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4.5V @ 490μA

Supplier Device Package :

PG-TO263-7-11

Subcategory :

MOSFETs

Channel Mode :

Enhancement

Minimum Operating Temperature :

- 40 C

Product Type :

MOSFET

Mounting Style :

SMD/SMT

Power Dissipation :

114W

Maximum Operating Temperature :

+ 150 C

Gate Charge (Qg) (Max) @ Vgs :

41 nC @ 10 V

Package :

Tape and Reel (TR)

Channel Type :

N Channel

Series :

CoolMOS?

Tradename :

CoolMOS

Product Category :

MOSFET

Number of Channels :

1 Channel

Input Capacitance (Ciss) (Max) @ Vds :

1950 pF @ 400 V

Qualification :

AEC-Q101

Packaging :

Cut Tape

Manufacturer :

Infineon

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

FET Feature :

-

Brand :

Infineon Technologies

Vgs (Max) :

±20V

Rise Time :

3 ns

Current - Continuous Drain (Id) @ 25°C :

21A (Tc)

Transistor Polarity :

N-Channel

FET Type :

N-Channel

Product Status :

Active

Drive Voltage (Max Rds On, Min Rds On) :

10V

Continuous Drain Current Id :

21A

Rds On (Max) @ Id, Vgs :

115mOhm @ 9.7A, 10V

Power Dissipation (Max) :

114W (Tc)

Base Product Number :

IPBE65R

Drain to Source Voltage (Vdss) :

650 V