IPA100N08N3GXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Turn-Off Delay Time :

23 ns

Series :

OptiMOS™

Pbfree Code :

yes

Case Connection :

Isolated

Number of Elements :

1

Continuous Drain Current (ID) :

40A

Terminal Finish :

Tin (Sn)

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

2410pF @ 40V

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

35W Tc

Terminal Position :

Single

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

10m Ω @ 40A, 10V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

13 ns

FET Type :

N-Channel

Pin Count :

3

Power Dissipation :

35W

Vgs (Max) :

±20V

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

30ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2008

ECCN Code :

EAR99

Number of Pins :

3

Halogen Free :

Halogen Free

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3 Full Pack

Max Dual Supply Voltage :

80V

Fall Time (Typ) :

5 ns

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Vgs(th) (Max) @ Id :

3.5V @ 46µA