IMW120R045M1XKSA1
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- Mfr.Part #
- IMW120R045M1XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- SICFET N-CH 1.2KV 52A TO247-3
- Stock
- 58
- In Stock ：
- 58
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 228W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 52A Tc
- Mounting Type :
- Through Hole
- Vgs (Max) :
- +20V, -10V
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-247-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 15V
- Vgs(th) (Max) @ Id :
- 5.7V @ 10mA
- Operating Temperature :
- -55°C~175°C TJ
- Factory Lead Time :
- 20 Weeks
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 59m Ω @ 20A, 15V
- Drain to Source Voltage (Vdss) :
- 1.2kV
- Series :
- CoolSiC™
- Gate Charge (Qg) (Max) @ Vgs :
- 52nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.9nF @ 800V
- Datasheets
- IMW120R045M1XKSA1
N-Channel 59m Ω @ 20A, 15V +20V, -10V 1.9nF @ 800V 52nC @ 15V 1.2kV TO-247-3
IMW120R045M1XKSA1 Description
IMW120R045M1XKSA1 CoolSiC? is a type of 1200V SiC trench MOSFET provided by Infineon Technologies. It is able to provide extremely low switching losses, a wide gate-source voltage range, and improved dV/dt capability. Based on these characteristics, it is well suited for energy generation, industrial power supplies, and infrastructure charges.
IMW120R045M1XKSA1 Features
-
Extremely low switching losses
-
Wide gate-source voltage range
-
Improved dV/dt capability
-
Increased power density
-
Available in the PG-TO247-3 package
IMW120R045M1XKSA1 Applications
-
Energy generation
-
Industrial power supplies
-
Infrastructure-charge
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