IGOT60R070D1AUMA1
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- Mfr.Part #
- IGOT60R070D1AUMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 20-PowerSOIC (0.433, 11.00mm Width)
- Datasheet
- Download
- Description
- GANFET N-CH 600V 31A 20DSO
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- CoolGaN™
- Power Dissipation-Max :
- 125W Tc
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Input Capacitance (Ciss) (Max) @ Vds :
- 380pF @ 400V
- Vgs(th) (Max) @ Id :
- 1.6V @ 2.6mA
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- 20-PowerSOIC (0.433, 11.00mm Width)
- Current - Continuous Drain (Id) @ 25°C :
- 31A Tc
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 600V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Vgs (Max) :
- -10V
- Factory Lead Time :
- 12 Weeks
- Datasheets
- IGOT60R070D1AUMA1
N-Channel Tape & Reel (TR) -10V 380pF @ 400V 600V 20-PowerSOIC (0.433, 11.00mm Width)
IGOT60R070D1AUMA1 Description
IGOT60R070D1AUMA1 is a type of CoolGaN? enhancement-mode power transistor provided by Infineon Technologies. It is able to provide advanced switching performance, superior commutation ruggedness, as well as low gate charge and output charge. It is well suited for industrial, telecom, and data center SMPS based on the basis of half-bridge topologies for hard and soft switching.
IGOT60R070D1AUMA1 Features
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Advanced switching performance
-
Superior commutation ruggedness
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Low gate charge
-
Low output charge
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Available in the PG-DSO-20-87 package
IGOT60R070D1AUMA1 Applications
-
Industrial, telecom, data center SMPS
-
Review CoolGaN? reliability white paper and contact Infineon regional support
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| IGOT60R042D1AUMA2 | Infineon Technologies | 25,367 | GANFET N-CH |
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| IGOT60R070D1E8220AUMA1 | Infineon Technologies | 26,042 | GAN HV |
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