HS54095TZ-E
- Mfr.Part #
- HS54095TZ-E
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-226-3, TO-92-3 Short Body
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 200MA TO92-3
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Vgs (Max) :
- ±30V
- Package / Case :
- TO-226-3, TO-92-3 Short Body
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 750mW Ta
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 16.5 Ω @ 100mA, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- BOTTOM
- DS Breakdown Voltage-Min :
- 600V
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 200mA
- JESD-30 Code :
- O-PBCY-W3
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2009
- Operating Temperature :
- 150°C TJ
- Drain Current-Max (Abs) (ID) :
- 0.2A
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Ta
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 4.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 66pF @ 25V
- Drain to Source Voltage (Vdss) :
- 600V
- Terminal Form :
- Wire
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 26 Weeks
- FET Type :
- N-Channel
- Datasheets
- HS54095TZ-E
N-Channel Tape & Reel (TR) 16.5 Ω @ 100mA, 10V ±30V 66pF @ 25V 4.8nC @ 10V 600V TO-226-3, TO-92-3 Short Body
HS54095TZ-E Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 66pF @ 25V.This device conducts a continuous drain current (ID) of 200mA, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 0.2A.A normal operation of the DS requires keeping the breakdown voltage above 600V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
HS54095TZ-E Features
a continuous drain current (ID) of 200mA
a 600V drain to source voltage (Vdss)
HS54095TZ-E Applications
There are a lot of Renesas Electronics America
HS54095TZ-E applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| HS54095-01-E | Intersil (Renesas Electronics Corporation) | 5,500 | N-CHANNEL POWER MOSFET |
| HS54095TZ-E | Intersil (Renesas Electronics Corporation) | 1 | HS54095TZ-E - N-CHANNEL POWER MO |
















