HCT7000M
- Mfr.Part #
- HCT7000M
- Manufacturer
- TT Electronics
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 200MA 3SMD
- Stock
- 28,603
- In Stock :
- 28,603
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- Manufacturer :
- TT Electronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Operating Temperature :
- 150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 5Ohm @ 500mA, 10V
- Continuous Drain Current (ID) :
- 200mA
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Bulk
- Turn-Off Delay Time :
- 10 ns
- Mounting Type :
- Surface Mount
- Min Operating Temperature :
- -55°C
- Published :
- 1997
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Rds On Max :
- 5 Ω
- Supplier Device Package :
- 3-SMD
- Input Capacitance :
- 60pF
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- Non-RoHS Compliant
- Power Dissipation :
- 300mW
- Drain to Source Voltage (Vdss) :
- 60V
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Ta
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 60pF @ 25V
- Vgs (Max) :
- ±40V
- Height :
- 1.3716mm
- Factory Lead Time :
- 15 Weeks
- Power Dissipation-Max :
- 300mW Ta
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Turn On Delay Time :
- 10 ns
- Drain to Source Resistance :
- 5Ohm
- Length :
- 3.175mm
- Gate to Source Voltage (Vgs) :
- 40V
- Width :
- 2.667mm
- Package / Case :
- 3-SMD, No Lead
- Datasheets
- HCT7000M
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N-Channel Bulk 5Ohm @ 500mA, 10V ±40V 60pF @ 25V 60V 3-SMD, No Lead
HCT7000M Overview
A device's maximum input capacitance is 60pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 200mA for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 10 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 5Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 40V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
HCT7000M Features
a continuous drain current (ID) of 200mA
the turn-off delay time is 10 ns
single MOSFETs transistor is 5Ohm
a 60V drain to source voltage (Vdss)
HCT7000M Applications
There are a lot of TT Electronics/Optek Technology
HCT7000M applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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