HAT2299WP-EL-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Transistor Application :

SWITCHING

Pin Count :

8

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

8

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

Terminal Form :

NO LEAD

Operating Temperature :

150°C TJ

Mounting Type :

Surface Mount

Power Dissipation-Max :

25W Tc

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

110m Ω @ 7A, 10V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

20

DS Breakdown Voltage-Min :

150V

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 25V

Factory Lead Time :

16 Weeks

Published :

2007

Terminal Position :

Dual

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.11Ohm

Package / Case :

8-PowerWDFN

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

150V

Continuous Drain Current (ID) :

14A